Consider a highly excited He atom. One electron is in a state with n1
= 4, l1 = 3 and the other in a state with n2 = 5, l2 = 4
(a) Find the possible values of l (total orbital angular momentum
quantum number) for the system.
(b) Find the possible values of s (total spin angular momentum quantum number)
for the system.
(c) Find the possible values of j (total angular momentum quantum number)
for the system.
(d) How many distinct angular momentum states with j = 1 are there?
Solution:
(a) Write down Maxwell's equations for a conducting medium with conductivity σ,
permittivity ε0 and permeability μ0.
(b) A plane wave of low frequency ω << σ/ε0 is propagating in the
z-direction inside the conducting medium.
Let E = E0exp(i(kz - ωt)),
B = B0exp(i(kz
- ωt)), where E0, B0, and k are complex.
Use Maxwell's equations to show that k = k1 + ik2, k1
≈ k2 ≈ (μ0ωσ/2)½.
Calculate the ratio of the complex amplitude of the two fields, E0/B0
(magnitude and phase).
(c) Calculate the energy flux (time averaged Poynting vector) in the
conducting medium.
Solution:
Consider a two-level system |Φa>, |Φb> with <Φi|Φj>
= δij. Show that an "entangled", two-particle state of the form
α|Φa(1)>|Φb(2)> + β|Φb(1)>|Φa(2)>,
α, β ≠ 0,
CANNOT be written as a product state |ψr(1)>|ψs(2)> for
any one particle states |ψr> and |ψs>.
Solution:
A beam of monochromatic light of wavelength λ in vacuum is incident normally on a nonmagnetic dielectric film of refractive index n and thickness d. Calculate the fraction of the incident energy that is reflected.
Solution:
ki = kr = kt = k, k1 = k2
= nk.
For z < 0 we have
E(r,t) =
i [Ei exp(i(kz - ωt)) - Er
exp(i(-kz - ωt))],
B(r,t)
= j [Ei exp(i(kz - ωt)) + Er
exp(i(-kz - ωt))]/c,
H(r,t)
= B(r,t)/μ0.
In the film for 0 <
z < d we have
E(r,t) = i [E1
exp(i(nkz - ωt)) - E2 exp(i(-nkz
- ωt))],
B(r,t) = j [E1
exp(i(nkz - ωt)) + E1 exp(i(-nkz
- ωt))](n/c), H(r,t) = B(r,t)/μ0.
For z > d we have
E(r,t) = i
Et exp(i(kz - ωt)),
B(r,t)
= j Et exp(i(kz - ωt))/c. H(r,t)
= B(r,t)/μ0.
The boundary
conditions at z = 0 for the tangential component of E yield
Ei - Er = E1 - E2.
The
boundary conditions at z = 0 for the tangential component of H
yield
Hi + Hr = H1 + H2. H
= B/μ0 in all regions, B = En/c in the film, B = E/c outside the
film.
Ei + Er = n(E1 + E2).
Measuring all field strength in units of Ei we have express E1
and E2 in terns of Er.
Er = -E1 +
E2 + 1, Er = nE1 + nE2 - 1.
E2 = ((n + 1)Er - n + 1)/(2n), E1 = (n +
1 - (n - 1)Er)/2n.
The boundary conditions at z = d for the
tangential component of E yield
E1exp(inkd) - E2exp(-inkd)
= Etexp(ikd).
The boundary conditions at z = d for the tangential
component of H yield
H1exp(inkd) + H2exp(-inkd)
= Htexp(ikd).
nE1exp(inkd) + nE2exp(-inkd) =
Etexp(ikd).
-(n + 1)E2exp(-inkd) = (n - 1)E1exp(inkd).
Substituting E1 and E2 in terms of Er from
above we get
-(n + 1)((n + 1)Er - n + 1)exp(-inkd) = (n - 1)(n + 1
- (n - 1)Er)exp(inkd).
Er[(n + 1)2exp(-inkd)
- (n - 1)2exp(inkd)] = (n2 - 1)exp(-inkd) - (n2
- 1)exp(inkd).
Er[4n cos(nkd) + i2(n2 + 1) sin(kd)] =
-i(n2 - 1)2sin(kd).
R = |Er|2 = 4(n2
- 1)2sin2(kd)/[16n2 cos2(nkd) + 4(n2
+ 1)2 sin2(kd)].
R = (n2 - 1)2/[4n2
cot2(nkd) + (n2 + 1)2]
is the reflectance,
i.e. the fraction of the incident energy that is reflected.